Semiconductor module

ABSTRACT

A semiconductor module includes a semiconductor device and bus bar. The device includes an insulating substrate, conductive member, switching elements, and first/second input terminals. The substrate has main/back surfaces opposite in a thickness direction, with the conductive member disposed on the main surface. The switching elements are connected to the conductive member. The first input terminal, including a first terminal portion, is connected to the conductive member. The second input terminal, including a second terminal portion overlapping with the first terminal portion in the thickness direction, is connected to the switching elements. The second input terminal is separate from the first input terminal and conductive member in the thickness direction. The bus bar includes first/second terminals. The second terminal, separate from the first terminal in the thickness direction, partially overlaps with the first terminal in the thickness direction. The first/second terminals are connected to the first/second terminal portions, respectively.

TECHNICAL FIELD

The present disclosure relates to a semiconductor module that includes,as constituent elements, a semiconductor device that includes aplurality of switching elements, and a bus bar that is joined to thesemiconductor device in a state of being electrically connected theretoand in which laminated wiring is realized.

BACKGROUND ART

Conventionally, semiconductor devices on which a plurality of switchingelements such as MOSFETs are mounted are widely known. Such asemiconductor device functions to convert direct current power intoalternating current power using the plurality of switching elements. Thesemiconductor device includes one pair of input terminals to whichdirect current power is input.

Patent Document 1 discloses one example of a semiconductor module thatincludes the semiconductor device and a rod-shaped conductor assemblythat is connected to the pair of input terminals of the semiconductordevice. As a result of the rod-shaped conductor assembly being connectedto a direct current power source, direct current power is supplied viathe rod-shaped conductor assembly to the semiconductor device. In therod-shaped conductor assembly, two pairs of conductor rods are arrangedin a short side direction of the semiconductor device, each pair beingconstituted by a rod-shaped conductor, which serves as a positiveelectrode, and a rod-shaped conductor, which serves as a negativeelectrode, that are arranged close to each other with an insulatingsheet member interposed therebetween. Thus, laminated wiring is realizedin the rod-shaped conductor assembly.

When the semiconductor device is in operation, inductance is generatedin the semiconductor device as a result of the plurality of switchingelements being switched from on to off. However, laminated wiring isrealized in the rod-shaped conductor assembly, and therefore inductanceis reduced by magnetic fields that are generated at one pair ofconductor rods. If inductance is reduced, a surge voltage that is causedby di/dt at the time of switching is reduced and the occurrence of noiseis suppressed, and consequently power loss in the semiconductor deviceis suppressed.

However, the pair of input terminals are spaced apart from each other inthe short side direction of the semiconductor device. Therefore,laminated wiring ceases at the pair of input terminals. As a result,there is a concern that inductance reduced by the rod-shaped conductorassembly may increase again at the pair of input terminals.

PRIOR ART DOCUMENTS Patent Document

Patent Document 1: JP 2015-130751A

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

In view of the above circumstances, the present disclosure aims toprovide a semiconductor module that is capable of more stably reducinginductance of a semiconductor device.

Means for Solving the Problem

A semiconductor module provided by the present disclosure includes: asemiconductor device that includes an insulating substrate with a mainsurface and a back surface facing opposite to each other in a thicknessdirection, a conductive member arranged on the main surface, a pluralityof switching elements electrically connected to the conductive member, afirst input terminal that has a first terminal portion and iselectrically connected to the conductive member, and a second inputterminal that has a second terminal portion overlapping with the firstterminal portion as viewed in the thickness direction, is spaced apartfrom both the first input terminal and the conductive member in thethickness direction, and is electrically connected to the plurality ofswitching elements; and a bus bar that includes a first supply terminaland a second supply terminal that is spaced apart from the first supplyterminal in the thickness direction and at least partially overlaps withthe first supply terminal as viewed in the thickness direction. Thefirst supply terminal is electrically connected to the first terminalportion, and the second supply terminal is electrically connected to thesecond terminal portion.

Other features and advantages of the present disclosure will be mademore clear by the following detailed description based on theaccompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a perspective view of a semiconductor module according to afirst embodiment of the present disclosure.

FIG. 2 is a plan view of a semiconductor device that is included inconstituent elements of the semiconductor module shown in FIG. 1.

FIG. 3 is a plan view of the semiconductor device shown in FIG. 2, witha sealing resin portion being transparent.

FIG. 4 is a plan view that corresponds to FIG. 3, with a second inputterminal being transparent.

FIG. 5 is a bottom view of the semiconductor device shown in FIG. 2.

FIG. 6 is a right side view of the semiconductor device shown in FIG. 2.

FIG. 7 is a left side view of the semiconductor device shown in FIG. 2.

FIG. 8 is a front view of the semiconductor device shown in FIG. 2.

FIG. 9 is a cross-sectional view taken along a line IX-IX in FIG. 3.

FIG. 10 is a cross-sectional view taken along a line X-X in FIG. 3.

FIG. 11 is a partial enlarged view of FIG. 3.

FIG. 12 is a cross-sectional view taken along a line XII-XII in FIG. 11.

FIG. 13 is a plan view of the semiconductor module shown in FIG. 1.

FIG. 14 is a cross-sectional view taken along a line XIV-XIV in FIG. 13.

FIG. 15 is a cross-sectional view taken along a line XV-XV in FIG. 13.

FIG. 16 is a partial enlarged view of FIG. 14.

FIG. 17 is a cross-sectional view of a semiconductor module according toa first variation of the first embodiment of the present disclosure.

FIG. 18 is a cross-sectional view of a semiconductor module according toa second variation of the first embodiment of the present disclosure.

FIG. 19 is a plan view of a semiconductor module according to a secondembodiment of the present disclosure.

FIG. 20 is a partial enlarged view of FIG. 19, with a molding resinportion being transparent.

FIG. 21 is a partial enlarged bottom view of the semiconductor moduleshown in FIG. 19, with the molding resin portion being transparent.

FIG. 22 is a cross-sectional view taken along a line XXII-XXII in FIG.19.

FIG. 23 is a cross-sectional view taken along a line XXIII-XXIII in FIG.20.

FIG. 24 is a cross-sectional view taken along a line XXIV-XXIV in FIG.20.

FIG. 25 is a cross-sectional view of a semiconductor module according toa first variation of the second embodiment of the present disclosure.

FIG. 26 is a cross-sectional view of a semiconductor module according toa second variation of the second embodiment of the present disclosure.

FIG. 27 is a plan view of a semiconductor device that is included inconstituent elements of a semiconductor module according to a thirdembodiment of the present disclosure.

FIG. 28 is a bottom view of the semiconductor device shown in FIG. 27.

FIG. 29 is a right side view of the semiconductor device shown in FIG.27.

FIG. 30 is a cross-sectional view taken along a line XXX-XXX in FIG. 27.

FIG. 31 is a plan view of the semiconductor module according to thethird embodiment of the present disclosure.

FIG. 32 is a cross-sectional view taken along a line XXXII-XXXII in FIG.31.

FIG. 33 is a partial enlarged view of FIG. 32.

MODE FOR CARRYING OUT THE INVENTION

The following describes modes for implementing the present disclosurebased on the accompanying drawings.

First Embodiment

A semiconductor module A10 according to a first embodiment of thepresent disclosure will be described based on FIGS. 1 to 16. As shown inFIG. 1, the semiconductor module A10 includes a semiconductor device B10and a bus bar C10 as constituent elements. The bus bar C10 is a powersupply member that is joined to the semiconductor device B10 in a stateof being electrically connected thereto. It should be noted that, inFIG. 3, a sealing resin portion 50 is transparent, for convenience ofunderstanding. In FIG. 3, lines IX-IX and X-X are each indicated by adash-dot line. In FIG. 4, the sealing resin portion 50 and a secondinput terminal 22 are transparent, for convenience of understanding. InFIG. 13, a line XV-XV is indicated by a dash-dot line.

Semiconductor Device B10

The following describes the semiconductor device B10 included inconstituent elements of the semiconductor module A10. The semiconductordevice B10 shown in FIGS. 2 to 12 is a power conversion device (powermodule) on which a plurality of switching elements such as MOSFETs aremounted. The semiconductor device B10 is used in a drive source of amotor, an inverter device of various electrical appliances, a DC/DCconverter, or the like. The semiconductor device B10 includes aninsulating substrate 10, a conductive member 11, a first input terminal21, a second input terminal 22, an output terminal 23, one pair of gateterminals 24, one pair of detection terminals 25, a plurality of dummyterminals 26, a plurality of switching elements 30, and the sealingresin portion 50. The plurality of switching elements 30 include aplurality of first elements 30A and a plurality of second elements 30B.In addition to the above, the semiconductor device B10 further includesone pair of insulating layers 12, one pair of gate layers 13, and onepair of detection layers 14.

In describing the semiconductor module A10 including the semiconductordevice B10 and the bus bar C10, the thickness direction of theinsulating substrate 10 will be referred to as a “thickness directionz”, for convenience of description. A direction that is orthogonal tothe thickness direction z will be referred to as a “first direction x”.A direction that is orthogonal to both the thickness direction z and thefirst direction x will be referred to as a “second direction y”. Thesemiconductor device B10 has a rectangular shape as viewed in thethickness direction z, i.e., in plan view. The first direction xcorresponds to the longitudinal direction of the semiconductor deviceB10. The second direction y corresponds to the transverse direction ofthe semiconductor device B10. In describing the semiconductor moduleA10, the side in the first direction x on which the first input terminal21 and the second input terminal 22 are located will be referred to as“one side in the first direction x”, for convenience of description. Theside in the first direction x on which the output terminal 23 is locatedwill be referred to as the “other side in the first direction x”. Itshould be noted that the definitions of the “thickness direction z”,“first direction x”, “second direction y”, “one side in the firstdirection x”, and “other side in the first direction x” also apply tothe description of a semiconductor module A20 and a semiconductor moduleA30, which will be described later.

As shown in FIGS. 3, 9, and 10, the conductive member 11 is arranged onthe insulating substrate 10. The insulating substrate 10 serves as asupport member for the conductive member 11 and the plurality ofswitching elements 30. The insulating substrate 10 is made of a materialthat contains a ceramic that has excellent thermal conductivity.Examples of such a ceramic include aluminum nitride (AlN).

As shown in FIGS. 3, 9, and 10, in the semiconductor device B10, whichis an example, the insulating substrate 10 includes a first substrate10A and a second substrate 10B. The first substrate 10A and the secondsubstrate 10B are spaced apart from each other in the first direction x.The first substrate 10A is located on the one side in the firstdirection x. The second substrate 10B is located on the other side inthe first direction x. As viewed in the thickness direction z, the firstsubstrate 10A and the second substrate 10B each have a rectangular shapewith long sides thereof extending in the second direction y. The firstsubstrate 10A and the second substrate 10B each have a main surface 101and a back surface 102 that face opposite sides to each other in thethickness direction z. The main surface 101 faces the side in thethickness direction z on which the conductive member 11 is arranged. Themain surface 101 is covered by the sealing resin portion 50 togetherwith the conductive member 11 and the plurality of switching elements30. As shown in FIG. 5, the back surface 102 is exposed from the sealingresin portion 50. It should be noted that the insulating substrate 10 isnot limited to this configuration, and may be constituted by a singlesubstrate.

As shown in FIGS. 3, 9, and 10, the conductive member 11 is arranged onthe main surface 101 of the insulating substrate 10. The conductivemember 11 constitutes a conduction path between the plurality ofswitching elements 30 and a power supply member such as the bus bar C10,together with the first input terminal 21, the second input terminal 22,and the output terminal 23. The conductive member 11 is a metal plate.The metal plate is made of copper (Cu) or a copper alloy. The conductivemember 11 is joined to the main surface 101 using a joining material(not shown) such as a silver (Ag) paste, for example. A surface of theconductive member 11 may be plated with silver, for example.

As shown in FIGS. 3, 9, and 10, in the semiconductor device B10, whichis an example, the conductive member 11 includes a first conductiveportion 11A and a second conductive portion 11B. As viewed in thethickness direction z, the first conductive portion 11A and the secondconductive portion 11B each have a rectangular shape with long sidesthereof extending in the second direction y. It should be noted that theconfiguration of the conductive member 11 is not limited to thisconfiguration and can be set freely based on the number and arrangementof the plurality of switching elements 30 that are set according to therequired performance of the semiconductor device B10.

As shown in FIGS. 3 and 9, the first conductive portion 11A is joined tothe main surface 101 of the first substrate 10A. The plurality of firstelements 30A are joined to a surface of the first conductive portion 11Ain a state of being electrically connected to the first conductiveportion 11A. As shown in FIGS. 3 and 10, the second conductive portion11B is joined to the main surface 101 of the second substrate 10B. Theplurality of second elements 30B are joined to a surface of the secondconductive portion 11B in a state of being electrically connected to thesecond conductive portion 11B.

As shown in FIGS. 4, 9, and 10, one of the pair of insulating layers 12is joined to the surface of the first conductive portion 11A, and theother is joined to the surface of the second conductive portion 11B.Each of the pair of insulating layers 12 has the shape of a bandextending in the second direction y. The insulating layer 12 that isjoined to the surface of the first conductive portion 11A is located onthe other side in the first direction x with respect to the plurality offirst elements 30A. The insulating layer 12 that is joined to thesurface of the second conductive portion 11B is located on the one sidein the first direction x with respect to the plurality of secondelements 30B. The pair of insulating layers 12 are made of a materialthat contains a glass epoxy resin, for example.

As shown in FIGS. 4, 9, and 10, one of the pair of gate layers 13 isarranged on the insulating layer 12 joined to the surface of the firstconductive portion 11A, and the other is arranged on the insulatinglayer 12 joined to the surface of the second conductive portion 11B.Each of the pair of gate layers 13 has the shape of a band extending inthe second direction y. The pair of gate layers 13 are electricallyconductive. The pair of gate layers 13 are made of a material thatcontains copper, for example.

As shown in FIGS. 4, 9, and 10, one of the pair of detection layers 14is arranged on the insulating layer 12 joined to the surface of thefirst conductive portion 11A, and the other is arranged on theinsulating layer 12 joined to the surface of the second conductiveportion 11B. Each of the pair of detection layers 14 is adjacent to acorresponding one of the pair of gate layers 13 in the first directionx. Each of the pair of detection layers 14 has the shape of a bandextending in the second direction y. The pair of detection layers 14 areelectrically conductive. The pair of detection layers 14 are made of amaterial that contains copper, for example.

As shown in FIGS. 2 to 6, the first input terminal 21 and the secondinput terminal 22 are located on the one side in the first direction x.A direct current voltage is applied to the first input terminal 21 andthe second input terminal 22 via the bus bar C10. The first inputterminal 21 serves as a positive electrode (P terminal). The secondinput terminal 22 serves as a negative electrode (N terminal). As shownin FIG. 10, the second input terminal 22 is spaced apart from both thefirst input terminal 21 and the conductive member 11 in the thicknessdirection z. The first input terminal 21 and the second input terminal22 are metal plates. The metal plates are made of copper or a copperalloy.

As shown in FIG. 4, the first input terminal 21 includes a first padportion 211 and a first terminal portion 212. The boundary between thefirst pad portion 211 and the first terminal portion 212 of the firstinput terminal 21 is a plane that extends in the second direction y andthe thickness direction z and includes a first side surface 531(described later in detail) of the sealing resin portion 50 that islocated on the one side in the first direction x. The entire first padportion 211 is covered by the sealing resin portion 50. A portion of thefirst pad portion 211 on the other side in the first direction x has theshape of comb teeth. This comb teeth-shaped portion is joined to thesurface of the first conductive portion 11A in a state of beingelectrically connected thereto. This joining is performed through solderjoining, ultrasonic joining, or the like. Thus, the first input terminal21 is electrically connected to the first conductive portion 11A.

As shown in FIGS. 4 and 5, the first terminal portion 212 extends fromthe sealing resin portion 50 toward the one side in the first directionx. The first terminal portion 212 has a rectangular shape as viewed inthe thickness direction z. Portions of the first terminal portion 212 onboth sides in the second direction y are covered by the sealing resinportion 50. The other portion of the first terminal portion 212 isexposed from the sealing resin portion 50. Thus, the first inputterminal 21 is supported by the sealing resin portion 50. Further, thefirst substrate 10A is supported by the first input terminal 21 via thefirst conductive portion 11A.

As shown in FIG. 3, the second input terminal 22 includes a second padportion 221 and a second terminal portion 222. The boundary between thesecond pad portion 221 and the second terminal portion 222 of the secondinput terminal 22 coincides with the boundary between the first padportion 211 and the first terminal portion 212 of the first inputterminal 21. The second pad portion 221 includes a linkage portion 221Aand a plurality of extension portions 221B. The linkage portion 221A hasthe shape of a band extending in the second direction y. The linkageportion 221A is continuous to the second terminal portion 222. Theplurality of extension portions 221B each have the shape of a bandextending from the linkage portion 221A toward the other side in thefirst direction x. The plurality of extension portions 221B are spacedapart from each other in the second direction y. As shown in FIG. 10,the plurality of extension portions 221B are bent as viewed in thesecond direction y. Surfaces of the plurality of extension portions 221Bmay be plated with silver, for example.

As shown in FIGS. 2 and 3, the second terminal portion 222 extends fromthe sealing resin portion 50 toward the one side in the first directionx. The second terminal portion 222 has a rectangular shape as viewed inthe thickness direction z. Portions of the second terminal portion 222on both sides in the second direction y are covered by the sealing resinportion 50. The other portion of the second terminal portion 222 isexposed from the sealing resin portion 50. As shown in FIGS. 3 and 4,the second terminal portion 222 overlaps with the first terminal portion212 of the first input terminal 21 as viewed in the thickness directionz. As shown in FIG. 10, the second terminal portion 222 is spaced apartfrom the first terminal portion 212, on the side in the thicknessdirection z that the main surface 101 of the insulating substrate 10faces. It should be noted that, in the semiconductor device B10, whichis an example, the second terminal portion 222 has the same shape as thefirst terminal portion 212.

As shown in FIGS. 6 and 10, an insulating member 29 is sandwichedbetween the first terminal portion 212 of the first input terminal 21and the second terminal portion 222 of the second input terminal 22 inthe thickness direction z. The insulating member 29 is a flat sheet. Theinsulating member 29 is constituted by insulating paper, for example.The entire first input terminal 21 overlaps with the insulating member29 as viewed in the thickness direction z. At the second input terminal22, a portion of the second pad portion 221 and the entire secondterminal portion 222 are in contact with the insulating member 29 asviewed in the thickness direction z. These portions overlapping with theinsulating member 29 as viewed in the thickness direction z are incontact with the insulating member 29. The first input terminal 21 andthe second input terminal 22 are insulated from each other by theinsulating member 29. Portions of the insulating member 29 (on the otherside in the first direction x and on both sides in the second directiony) are covered by the sealing resin portion 50.

As shown in FIGS. 3, 4, and 10, the insulating member 29 includes aninterposed portion 291 and an extension portion 292. The interposedportion 291 is located between the first terminal portion 212 of thefirst input terminal 21 and the second terminal portion 222 of thesecond input terminal 22 in the thickness direction z. The entireinterposed portion 291 is sandwiched between the first terminal portion212 and the second terminal portion 222. The extension portion 292extends from the interposed portion 291 toward the one side in the firstdirection x past the first terminal portion 212 and the second terminalportion 222. Therefore, the extension portion 292 is located furthertoward the one side in the first direction x than the first terminalportion 212 and the second terminal portion 222. Portions of theextension portion 292 on both sides in the second direction y arecovered by the sealing resin portion 50.

As shown in FIGS. 2 to 7 (excluding FIG. 6), the output terminal 23 islocated on the other side in the first direction x. Alternating currentpower (voltage) that is obtained through power conversion by theplurality of switching elements 30 is output from the output terminal23. The output terminal 23 is a metal plate. The metal plate is made ofcopper or a copper alloy. The output terminal 23 includes a pad portion231 and a terminal portion 232. The boundary between the pad portion 231and the terminal portion 232 is a plane that extends in the seconddirection y and the thickness direction z and includes a first sidesurface 531 (described later in detail) of the sealing resin portion 50that is located on the other side in the first direction x. The entirepad portion 231 is covered by the sealing resin portion 50. A portion ofthe pad portion 231 on the one side in the first direction x has theshape of comb teeth. This comb teeth-shaped portion is joined to thesurface of the second conductive portion 11B in a state of beingelectrically connected thereto. This joining is performed through solderjoining, ultrasonic joining, or the like. Thus, the output terminal 23is electrically connected to the second conductive portion 11B. As shownin FIGS. 2 to 5, the terminal portion 232 extends from the sealing resinportion 50 toward the other side in the first direction x. The terminalportion 232 has a rectangular shape as viewed in the thickness directionz. Portions of the terminal portion 232 on both sides in the seconddirection y are covered by the sealing resin portion 50. The otherportion of the terminal portion 232 is exposed from the sealing resinportion 50. Thus, the output terminal 23 is supported by the sealingresin portion 50. Further, the second substrate 10B is supported by theoutput terminal 23 via the second conductive portion 11B.

As shown in FIGS. 3, 9, and 10, the plurality of switching elements 30(the plurality of first elements 30A and the plurality of secondelements 30B) are joined to the first conductive portion 11A and thesecond conductive portion 11B, which constitute the conductive member11, in a state of being electrically connected thereto. The plurality ofswitching elements 30 are arranged in a staggered manner in the seconddirection y as viewed in the thickness direction z. Out of the pluralityof switching elements 30, the plurality of first elements 30A constitutean upper arm circuit of the semiconductor device B10. The plurality ofsecond elements 30B constitute a lower arm circuit of the semiconductordevice B10. Each of the plurality of switching elements 30 has arectangular shape (square shape in the semiconductor device B10) asviewed in the thickness direction z. In the semiconductor device B10,which is an example, the plurality of switching elements 30 areconstituted by four first elements 30A and four second elements 30B. Itshould be noted that the number of switching elements 30 is not limitedto that in this configuration and can be set freely according to therequired performance of the semiconductor device B10.

The first elements 30A and the second elements 30B aremetal-oxide-semiconductor field-effect transistors (MOSFETs) that areobtained using a semiconductor material that contains silicon carbide(SiC) as the main component. It should be noted that the first elements30A and the second elements 30B are not limited to MOSFETs and may befield-effect transistors including metal-insulator-semiconductorfield-effect transistors (MISFETs) or bipolar transistors such asinsulated gate bipolar transistors (IGBTs). In describing thesemiconductor device B10, one example is described in which all of thefirst elements 30A and the second elements 30B are n-channel verticalMOSFETs.

As shown in FIGS. 11 and 12, each of the first elements 30A and thesecond elements 30B has a first surface 301, a second surface 302, afirst electrode 31, a second electrode 32, a gate electrode 33, and aninsulating film 34. The first surface 301 and the second surface 302face opposite sides to each other in the thickness direction z. Out ofthese surfaces, the first surface 301 faces the side that the mainsurface 101 of the insulating substrate 10 faces.

As shown in FIGS. 11 and 12, the first electrode 31 is provided on thefirst surface 301. A source current flows through the first electrode31. In the semiconductor device B10, which is an example, the firstelectrode 31 is divided into four regions.

As shown in FIG. 11, a plurality of first wires 401 are respectivelyconnected to the four regions of the first electrode 31 of the firstelement 30A. The first wires 401 are made of aluminum, for example. Aplurality of first wires 401 that are connected to the first electrodes31 of the plurality of first elements 30A are connected to the surfaceof the second conductive portion 11B. Thus, the first electrodes 31 ofthe plurality of first elements 30A are electrically connected to thesecond conductive portion 11B. The plurality of first wires 401 extendin the first direction x.

As shown in FIG. 11, a plurality of second wires 402 are respectivelyconnected to the four regions of the first electrode 31 of the secondelement 30B. The second wires 402 are made of aluminum, for example. Aplurality of second wires 402 that are connected to the first electrodes31 of the plurality of second elements 30B are connected to the surfacesof the plurality of extension portions 221B (second pad portion 221) ofthe second input terminal 22. Thus, the first electrodes 31 of theplurality of second elements 30B are electrically connected to thesecond input terminal 22. That is, the second input terminal 22 iselectrically connected to the plurality of second elements 30B thatconstitute a portion of the plurality of switching elements 30. Theplurality of second wires 402 extend in the first direction x.

As shown in FIG. 12, the second electrode 32 is provided over the entiresecond surface 302. A drain current flows through the second electrode32. The second electrode 32 of the first element 30A is joined to thesurface of the first conductive portion 11A in a state of beingelectrically connected thereto by a conductive joining layer 39 that iselectrically conductive. The conductive joining layer 39 is made oflead-free solder that contains tin (Sn) as the main component, forexample. The second electrode 32 of the second element 30B is joined tothe surface of the second conductive portion 11B in a state of beingelectrically connected thereto by the conductive joining layer 39.

As shown in FIG. 11, the gate electrode 33 is provided on the firstsurface 301. A gate voltage for driving a corresponding one of the firstelements 30A and the second elements 30B is applied to the gateelectrode 33. The gate electrode 33 is smaller than the first electrode31. Any one of a plurality of gate wires 403 is connected to the gateelectrode 33. The gate wires 403 are made of aluminum, for example. Aplurality of gate wires 403 that are respectively connected to the gateelectrodes 33 of the plurality of first elements 30A are connected tothe gate layer 13 that is arranged on the insulating layer 12 joined tothe first conductive portion 11A. A plurality of gate wires 403 that arerespectively connected to the gate electrodes 33 of the plurality ofsecond elements 30B are connected to the gate layer 13 that is arrangedon the insulating layer 12 joined to the second conductive portion 11B.

As shown in FIG. 11, in each of the first elements 30A and the secondelements 30B, anyone of a plurality of detection wires 404 is connectedto the first electrode 31. The detection wire 404 is connected to anyone of the four regions of the first electrode 31. The detection wires404 are made of aluminum, for example. A plurality of detection wires404 that are respectively connected to the first electrodes 31 of theplurality of first elements 30A are connected to the detection layer 14that is arranged on the insulating layer 12 joined to the firstconductive portion 11A. A plurality of detection wires 404 that arerespectively connected to the first electrodes 31 of the plurality ofsecond elements 30B are connected to the detection layer 14 that isarranged on the insulating layer 12 joined to the second conductiveportion 11B.

As shown in FIGS. 11 and 12, the insulating film 34 is provided on thefirst surface 301. The insulating film 34 surrounds the first electrode31 as viewed in the thickness direction z. The insulating film 34 isformed by, for example, stacking a silicon dioxide (SiO₂) layer, asilicon nitride (Si₃N₄) layer, and a polybenzoxazole (PBO) layer in thisorder on the first surface 301. It should be noted that, in theinsulating film 34, the polybenzoxazole layer may be replaced with apolyimide layer.

As shown in FIG. 3, the pair of gate terminals 24, the pair of detectionterminals 25, and the plurality of dummy terminals 26 are adjacent tothe insulating substrate 10 in the second direction y. These terminalsare arranged in the first direction x. In the semiconductor device B10,the pair of gate terminals 24, the pair of detection terminals 25, andthe plurality of dummy terminals 26 are all constituted by the same leadframe.

As shown in FIG. 3, one of the pair of gate terminals 24 is adjacent tothe first substrate 10A in the second direction y, and the other isadjacent to the second substrate 10B in the second direction y. A gatevoltage for driving the plurality of first elements 30A and a gatevoltage for driving the plurality of second elements 30B are eachapplied to a corresponding one of the pair of gate terminals 24. Each ofthe pair of gate terminals 24 includes a pad portion 241 and a terminalportion 242. The pad portion 241 is covered by the sealing resin portion50. Thus, the pair of gate terminals 24 are supported by the sealingresin portion 50. It should be noted that a surface of the pad portion241 may be plated with silver, for example. The terminal portion 242 iscontinuous to the pad portion 241 and is exposed from the sealing resinportion 50 (see FIG. 8). The terminal portion 242 has an L-shape asviewed in the first direction x.

As shown in FIG. 3, each of the pair of detection terminals 25 isadjacent to a corresponding one of the pair of gate terminals 24 in thefirst direction x. A voltage (voltage corresponding to the sourcecurrent) applied to the first electrodes 31 of the plurality of firstelements 30A and a voltage applied to the first electrodes 31 of theplurality of second elements 30B are each detected by a correspondingone of the pair of detection terminals 25. Each of the pair of detectionterminals 25 includes a pad portion 251 and a terminal portion 252. Thepad portion 251 is covered by the sealing resin portion 50. Thus, thepair of detection terminals 25 are supported by the sealing resinportion 50. It should be noted that a surface of the pad portion 251 maybe plated with silver, for example. The terminal portion 252 iscontinuous to the pad portion 251 and is exposed from the sealing resinportion 50 (see FIG. 8). The terminal portion 252 has an L-shape asviewed in the first direction x.

As shown in FIG. 3, the plurality of dummy terminals 26 are located onthe sides opposite to the pair of gate terminals 24 with respect to thepair of detection terminals 25 in the first direction x. Thesemiconductor device B10, which is an example, includes six dummyterminals 26. Out of the six dummy terminals 26, three dummy terminalsare located on the one side in the first direction x. The remainingthree dummy terminals 26 are located on the other side in the firstdirection x. It should be noted that the number of dummy terminals 26 isnot limited to that in this configuration. Further, the semiconductordevice B10 may also have a configuration that does not include theplurality of dummy terminals 26. Each of the plurality of dummyterminals 26 includes a pad portion 261 and a terminal portion 262. Thepad portion 261 is covered by the sealing resin portion 50. Thus, theplurality of dummy terminals 26 are supported by the sealing resinportion 50. It should be noted that a surface of the pad portion 261 maybe plated with silver, for example. The terminal portion 262 iscontinuous to the pad portion 261 and is exposed from the sealing resinportion 50 (see FIG. 8). As shown in FIGS. 6 and 7, the terminal portion262 has an L-shape as viewed in the first direction x. It should benoted that the terminal portions 242 of the pair of gate terminals 24and the terminal portions 252 of the pair of detection terminals 25 eachhave the same shape as the terminal portion 262.

As shown in FIGS. 3 and 11, the semiconductor device B10 includes onepair of first connection wires 41 and one pair of second connectionwires 42. The pair of first connection wires 41 and the pair of secondconnection wires 42 are made of aluminum, for example.

As shown in FIGS. 3 and 11, each of the pair of first connection wires41 is connected to a corresponding one of the pair of gate layers 13 anda corresponding one of the pair of gate terminals 24. The pair of firstconnection wires 41 are connected to surfaces of the pair of padportions 241 of the pair of gate terminals 24. Thus, the gate terminal24 that is adjacent to the first substrate 10A in the second direction yis electrically connected to the gate electrodes 33 of the plurality offirst elements 30A. The gate terminal 24 that is adjacent to the secondsubstrate 10B in the second direction y is electrically connected to thegate electrodes 33 of the plurality of second elements 30B.

As shown in FIGS. 3 and 11, each of the pair of second connection wires42 is connected to a corresponding one of the pair of detection layers14 and a corresponding one of the pair of detection terminals 25. Thepair of second connection wires 42 are connected to surfaces of the pairof pad portions 251 of the pair of detection terminals 25. Thus, thedetection terminal 25 that is adjacent to the first substrate 10A in thesecond direction y is electrically connected to the first electrodes 31of the plurality of first elements 30A. The detection terminal 25 thatis adjacent to the second substrate 10B in the second direction y iselectrically connected to the first electrodes 31 of the plurality ofsecond elements 30B.

As shown in FIGS. 9 and 10, the sealing resin portion 50 covers theinsulating substrate 10 (excluding the pair of back surfaces 102), theconductive member 11, and the plurality of switching elements 30 (theplurality of first elements 30A and the plurality of second elements30B). The sealing resin portion 50 further covers the plurality of firstwires 401, the plurality of second wires 402, the plurality of gatewires 403, the plurality of detection wires 404, the pair of firstconnection wires 41, and the pair of second connection wires 42. Thesealing resin portion 50 is made of a material that contains an epoxyresin, for example. As shown in FIGS. 2 and 5 to 8, the sealing resinportion 50 has a top surface 51, a bottom surface 52, one pair of firstside surfaces 531, one pair of second side surfaces 532, a plurality ofthird side surfaces 533, a plurality of fourth side surfaces 534, and aplurality of attachment holes 54.

As shown in FIGS. 9 and 10, the top surface 51 faces the side in thethickness direction z that the main surface 101 of the insulatingsubstrate 10 faces. The bottom surface 52 faces the side in thethickness direction z that the back surface 102 of the insulatingsubstrate 10 faces. As shown in FIG. 5, the pair of back surfaces 102are exposed from the bottom surface 52. The bottom surface 52 has theshape of a frame that surrounds the pair of back surfaces 102.

As shown in FIGS. 2 and 5 to 7, the pair of first side surfaces 531 arecontinuous to both the top surface 51 and the bottom surface 52 and facethe first direction x. The first terminal portion 212 of the first inputterminal 21 and the second terminal portion 222 of the second inputterminal 22 extend toward the one side in the first direction x from afirst side surface 531 that is located on the one side in the firstdirection x. The terminal portion 232 of the output terminal 23 extendstoward the other side in the first direction x from a first side surface531 that is located on the other side in the first direction x.

As shown in FIGS. 2 and 5 to 8, the pair of second side surfaces 532 arecontinuous to both the top surface 51 and the bottom surface 52 and facethe second direction y. The terminal portions 242 of the pair of gateterminals 24, the terminal portions 252 of the pair of detectionterminals 25, and the terminal portions 262 of the plurality of dummyterminals 26 are exposed from either of the pair of second side surfaces532.

As shown in FIGS. 2 and 5 to 7, the plurality of third side surfaces 533are continuous to both the top surface 51 and the bottom surface 52 andface the second direction y. The plurality of third side surfaces 533include one pair of third side surfaces 533 that are located on the oneside in the first direction x and one pair of third side surfaces 533that are located on the other side in the first direction x. On each ofthe one side and the other side in the first direction x, the pair ofthird side surfaces 533 are located opposite to each other in the seconddirection y. Also, on each of the one side and the other side in thefirst direction x, the pair of third side surfaces 533 are continuous toboth sides of the first side surface 531 in the second direction y.

As shown in FIGS. 2 and 5 to 8, the plurality of fourth side surfaces534 are continuous to both the top surface 51 and the bottom surface 52and face the first direction x. The plurality of fourth side surfaces534 are located further outward from the semiconductor device B10 thanthe pair of first side surfaces 531 in the first direction x. Theplurality of fourth side surfaces 534 include one pair of fourth sidesurfaces 534 that are located on the one side in the first direction xand one pair of fourth side surfaces 534 that are located on the otherside in the first direction x. On each of the one side and the otherside in the first direction x, each of the pair of fourth side surfaces534 is continuous, on both sides thereof in the second direction y, to acorresponding one of the pair of second side surfaces 532 and acorresponding one of the pair of third side surfaces 533.

As shown in FIG. 9, the plurality of attachment holes 54 extend from thetop surface 51 to the bottom surface 52 in the thickness direction z,passing through the sealing resin portion 50. The attachment holes 54are used to attach the semiconductor device B10 to a heat sink (notshown). As shown in FIGS. 2 and 5, hole edges of the attachment holes 54each have a circular shape as viewed in the thickness direction z. Theattachment holes 54 are located at four corners of the sealing resinportion 50 as viewed in the thickness direction z.

Bus Bar C10

The following describes the bus bar C10 included in constituent elementsof the semiconductor module A10. The bus bar C10 includes a first supplyterminal 61, a second supply terminal 62, an insulator 69, and a moldingresin portion 80.

As shown in FIGS. 13 to 15, the first supply terminal 61 and the secondsupply terminal 62 each have the shape of a band extending in the firstdirection x. The second supply terminal 62 is spaced apart from thefirst supply terminal 61, on the side in the thickness direction z thatthe main surface 101 of the insulating substrate 10 faces. The secondsupply terminal 62 overlaps with the first supply terminal 61 as viewedin the thickness direction z. In the bus bar C10, which is an example,the first supply terminal 61 and the second supply terminal 62 have thesame shape as each other. The first supply terminal 61 and the secondsupply terminal 62 are metal plates. The metal plates are made of copperor a copper alloy.

As shown in FIG. 14, the insulator 69 is sandwiched between the firstsupply terminal 61 and the second supply terminal 62 in the thicknessdirection z. As shown in FIG. 16, the insulator 69 is located furthertoward the one side in the first direction x than respective leadingends of the first supply terminal 61 and the second supply terminal 62that are located on the other side in the first direction x. Theinsulator 69 is made of a material that contains a glass epoxy resin,for example. The first supply terminal 61 is in contact with theinsulator 69, on the side in the thickness direction z that the backsurface 102 of the insulating substrate 10 faces. The second supplyterminal 62 is in contact with the insulator 69, on the side in thethickness direction z that the main surface 101 of the insulatingsubstrate 10 faces. In this configuration, the first supply terminal 61and the second supply terminal 62 overlap with each other as viewed inthe thickness direction z, and constitute laminated wiring in a state ofbeing electrically insulated from each other by the insulator 69.

As shown in FIG. 16, the insulator 69 includes one pair of separatedportions 691 and a base portion 692. In the insulator 69, the pair ofseparated portions 691 are located on the other side in the firstdirection x. The pair of separated portions 691 are spaced apart fromeach other in the thickness direction z. Accordingly, there is a spacebetween the pair of separated portions 691 in the thickness direction z.The base portion 692 is the portion of the insulator 69 other than thepair of separated portions 691. The base portion 692 is thicker thaneach of the pair of separated portions 691. The base portion 692 iscontinuous to both of the pair of separated portions 691 on the otherside in the first direction x.

As shown in FIGS. 13 and 14, the molding resin portion 80 coversrespective portions of the first supply terminal 61, the second supplyterminal 62, and the insulator 69. The material of the molding resinportion 80 is a synthetic resin that has electrical insulatingproperties such as an epoxy resin. Respective portions of the firstsupply terminal 61, the second supply terminal 62, and the insulator 69protrude from both sides of the molding resin portion 80 in the firstdirection x. It should be noted that the bus bar C10 may also have aconfiguration that does not include the molding resin portion 80.

Semiconductor Module A10

The following describes the semiconductor module A10.

As shown in FIG. 16, in the semiconductor module A10, the first supplyterminal 61 is joined to the first terminal portion 212 of the firstinput terminal 21 in a state of being electrically connected thereto,and the second supply terminal 62 is joined to the second terminalportion 222 of the second input terminal 22 in a state of beingelectrically connected thereto. As shown in FIGS. 15 and 16, a portionof the first supply terminal 61 on the other side in the first directionx is overlaid by the first terminal portion 212. A portion of the secondsupply terminal 62 on the other side in the first direction x isoverlaid on the second terminal portion 222. In this case, the extensionportion 292 of the insulating member 29 is inserted into the space thatis provided between the pair of separated portions 691 of the insulator69 in the thickness direction z. The first supply terminal 61 and thesecond supply terminal 62 are respectively joined to the first terminalportion 212 and the second terminal portion 222 through laser welding ina state of being electrically connected thereto.

In the semiconductor module A10, the first supply terminal 61 serves asa positive electrode and the second supply terminal 62 serves as anegative electrode. As a result of portions of the first supply terminal61 and the second supply terminal 62 on the one side in the firstdirection x being connected to a direct current power source DC as shownin FIGS. 17 and 18, direct current power is supplied via the bus bar C10to the semiconductor device B10.

First Variation of First Embodiment

The following describes a semiconductor module A11 according to a firstvariation of the first embodiment of the present disclosure based onFIG. 17. The semiconductor module A11 further includes a capacitor C,compared to the semiconductor module A10.

As shown in FIG. 17, portions of the first supply terminal 61 and thesecond supply terminal 62 on the one side in the first direction x areconnected to the direct current power source DC for supplying directcurrent power to the semiconductor device B10. The capacitor C isconnected in parallel to the first supply terminal 61 and the secondsupply terminal 62 that are connected to the direct current power sourceDC. The capacitor C is a ceramic capacitor, a film capacitor, or thelike. The capacitance of the capacitor C is set according to frequencycharacteristics of the semiconductor device B10.

Second Variation of First Embodiment

The following describes a semiconductor module A12 according to a secondvariation of the first embodiment of the present disclosure based onFIG. 18. The semiconductor module A12 further includes a resistor R,compared to the semiconductor module A11.

As shown in FIG. 18, portions of the first supply terminal 61 and thesecond supply terminal 62 on the one side in the first direction x areconnected to the direct current power source DC for supplying directcurrent power to the semiconductor device B10. The capacitor C isconnected in parallel to the first supply terminal 61 and the secondsupply terminal 62 that are connected to the direct current power sourceDC. The resistor R is connected to the capacitor C in series. On theconduction path between the first supply terminal 61, the second supplyterminal 62, and the capacitor C, the resistor R is connected betweenthe first supply terminal 61 and the capacitor C. Thus, a snubbercircuit is formed in the semiconductor module A12.

Next, functions and effects of the semiconductor module A10 will bedescribed.

The semiconductor module A10 includes, as constituent elements, thesemiconductor device B10 that includes the first input terminal 21having the first terminal portion 212 and the second input terminal 22having the second terminal portion 222, and the bus bar C10 thatincludes the first supply terminal 61 and the second supply terminal 62.The second terminal portion 222 is spaced apart from the first terminalportion 212 in the thickness direction z and overlaps with the firstterminal portion 212 as viewed in the thickness direction z. The secondsupply terminal 62 is spaced apart from the first supply terminal 61 inthe thickness direction z and overlaps with the first supply terminal 61as viewed in the thickness direction z. The first supply terminal 61 isjoined to the first terminal portion 212 in a state of beingelectrically connected thereto, and the second supply terminal 62 isjoined to the second terminal portion 222 in a state of beingelectrically connected thereto. Thus, continuous laminated wiring isrealized in the semiconductor module A10 by the first terminal portion212, the first supply terminal 61, the second terminal portion 222, andthe second supply terminal 62. Since direct current power is suppliedvia the laminated wiring to the semiconductor device B10, inductancegenerated in the semiconductor device B10 can be more stably reduced bythe laminated wiring. Therefore, inductance of the semiconductor deviceB10 can be more stably reduced in the semiconductor module A10.

The semiconductor device B10 further includes the insulating member 29that is sandwiched between the first terminal portion 212 and the secondterminal portion 222 in the thickness direction z. Therefore, laminatedwiring can be easily realized by the first terminal portion 212 and thesecond terminal portion 222.

The bus bar C10 further includes the insulator 69 that is sandwichedbetween the first supply terminal 61 and the second supply terminal 62in the thickness direction z. Therefore, laminated wiring can be easilyrealized by the first supply terminal 61 and the second supply terminal62. Furthermore, the insulator 69 is located further toward the one sidein the first direction x than the respective leading ends of the firstsupply terminal 61 and the second supply terminal 62 that are located onthe other side in the first direction x. Therefore, a space is formedbetween portions of the first supply terminal 61 and the second supplyterminal 62 that are located on the other side in the first direction x.By inserting portions of the first terminal portion 212 and the secondterminal portion 222 on the one side in the first direction x into thisspace, a configuration can be realized in which the first terminalportion 212 and the second terminal portion 222 are sandwiched betweenthe first supply terminal 61 and the second supply terminal 62 in thethickness direction z. In other words, the semiconductor module A10 canhave a configuration in which the first supply terminal 61 is overlaidby the first terminal portion 212 and the second supply terminal 62 isoverlaid on the second terminal portion 222.

The first supply terminal 61 and the second supply terminal 62 arerespectively joined to the first terminal portion 212 and the secondterminal portion 222 through laser welding in a state of beingelectrically connected thereto. Even if the first supply terminal 61 isoverlaid by the first terminal portion 212 and the second supplyterminal 62 is overlaid on the second terminal portion 222, if laserwelding is adopted, the first supply terminal 61 and the second supplyterminal 62 can be easily joined to the respective terminal portions ina state where electrical connection is ensured.

The insulating member 29 includes the extension portion 292 that extendsfrom the interposed portion 291 toward the one side in the firstdirection x past the first terminal portion 212 and the second terminalportion 222. The insulator 69 includes the pair of separated portions691 that are spaced apart from each other in the thickness direction z.As shown in FIG. 16, the extension portion 292 is inserted into thespace that is provided between the pair of separated portions 691 in thethickness direction z. With this configuration, inclination of thesemiconductor device B10 and the bus bar C10 relative to the firstdirection x can be suppressed when portions of the first terminalportion 212 and the second terminal portion 222 on the one side in thefirst direction x are inserted into the space between the first supplyterminal 61 and the second supply terminal 62. Therefore, the state ofcontact between the first terminal portion 212 and the first supplyterminal 61 and the state of contact between the second terminal portion222 and the second supply terminal 62 can be more stable.

The semiconductor module A11 (see FIG. 17) further includes thecapacitor C that is connected in parallel to the first supply terminal61 and the second supply terminal 62. When the plurality of switchingelements 30 of the semiconductor device B10 are driven, a counterelectromotive force that causes the generation of inductance isgenerated at the first input terminal 21 and the second input terminal22. The capacitor C functions to store the counter electromotive forceas electric charge. Therefore, inductance of the semiconductor deviceB10 can be more effectively reduced. It should be noted that electriccharge stored in the capacitor C is utilized as a portion of directcurrent power to be supplied to the semiconductor device B10.

The semiconductor module A12 (see FIG. 18) further includes thecapacitor C that is connected in parallel to the first supply terminal61 and the second supply terminal 62, and the resistor R that isconnected to the capacitor C in series. The resistor R is capable ofstepping down the voltage of the counter electromotive force generatedat the first input terminal 21 and the second input terminal 22.Therefore, excessive charging of the capacitor C can be prevented.

The semiconductor device B10 includes the sealing resin portion 50 thatcovers the plurality of switching elements 30 such that the back surface102 of the insulating substrate 10 is exposed. With this configuration,the back surface 102 can be joined to a heat sink, and therefore heatdissipation of the semiconductor device B10 can be improved.Furthermore, respective portions of the first terminal portion 212, thesecond terminal portion 222, and the insulating member 29 are covered bythe sealing resin portion 50. Therefore, the first input terminal 21,the second input terminal 22, and the insulating member 29 can besupported by the sealing resin portion 50.

Second Embodiment

The following describes a semiconductor module A20 according to a secondembodiment of the present disclosure based on FIGS. 19 to 24. In thesefigures, elements that are the same as or similar to those of theabove-described semiconductor module A10 are denoted with the samereference signs as those used in the semiconductor module A10, and aredundant description will be omitted. The semiconductor module A20includes a semiconductor device B10 and a bus bar C20. Out of these, theconfiguration of the bus bar C20 differs from that in theabove-described semiconductor module A10. It should be noted that theconfiguration of the semiconductor device B10 is the same as that in theabove-described semiconductor module A10, and therefore a descriptionthereof is omitted. It should be noted that a molding resin portion 80is transparent in FIGS. 20 and 21 for convenience of understanding.

Bus Bar C20

The following describes the bus bar C20 included in constituent elementsof the semiconductor module A20. The bus bar C20 includes a first supplyterminal 61, a second supply terminal 62, an insulator 69, an insulatingbase 70, a first conductive layer 71, a second conductive layer 72, andthe molding resin portion 80.

As shown in FIGS. 21, 22, and 24, the first supply terminal 61 includesa first connection portion 611 and a first upright portion 612. Thefirst connection portion 611 has the shape of a band extending in thefirst direction x. The first connection portion 611 is in contact withthe insulator 69, on the side in the thickness direction z that the backsurface 102 of the insulating substrate 10 faces. The first uprightportion 612 extends from a leading end of the first connection portion611 on the one side in the first direction x toward the side in thethickness direction z that the main surface 101 of the insulatingsubstrate 10 faces. In the bus bar C20, which is an example, the firstupright portion 612 includes three regions that are spaced apart fromeach other in the second direction y. Accordingly, the first uprightportion 612 has the shape of comb teeth. It should be noted that thenumber of regions is not limited to that in this configuration.

As shown in FIGS. 20, 22, and 23, the second supply terminal 62 includesa second connection portion 621 and a second upright portion 622. Thesecond connection portion 621 is in contact with the insulator 69, onthe side in the thickness direction z that the main surface 101 of theinsulating substrate 10 faces. The second connection portion 621overlaps with the first connection portion 611 as viewed in thethickness direction z. The second upright portion 622 extends from aleading end of the second connection portion 621 on the one side in thefirst direction x toward the side in the thickness direction z that themain surface 101 faces. In the bus bar C20, which is an example, thesecond upright portion 622 includes three regions that are spaced apartfrom each other in the second direction y. Accordingly, the secondupright portion 622 has the shape of comb teeth. It should be noted thatthe number of regions is not limited to that in this configuration. Thesecond upright portion 622 is located further toward the other side inthe first direction x than the first upright portion 612, and overlapswith the first upright portion 612 as viewed in the first direction x.The molding resin portion 80 is interposed between the second uprightportion 622 and the first upright portion 612 in the first direction x.

As shown in FIGS. 22 and 23, the insulator 69 is sandwiched between thefirst connection portion 611 of the first supply terminal 61 and thesecond connection portion 621 of the second supply terminal 62 in thethickness direction z. The insulator 69 is located further toward theone side in the first direction x than respective leading ends of thefirst connection portion 611 and the second connection portion 621 thatare located on the other side in the first direction x. Similarly to theinsulator 69 of the bus bar C10, the insulator 69 includes one pair ofseparated portions 691 and a base portion 692.

In the above-described configuration, at least a portion of the secondsupply terminal 62 overlaps with the first supply terminal 61 as viewedin the thickness direction z. The second supply terminal 62 is spacedapart from the first supply terminal 61, on the side in the thicknessdirection z that the main surface 101 faces. Further, the first supplyterminal 61 and the second supply terminal 62 partially overlap witheach other as viewed in both the thickness direction z and the firstdirection x, and constitute laminated wiring in a state of beingelectrically insulated from each other by the insulator 69 and themolding resin portion 80.

As shown in FIGS. 19 and 22, the insulating base 70 has the shape of aband extending in the first direction x. With respect to the secondconnection portion 621 of the second supply terminal 62, the insulatingbase 70 is located on the side in the thickness direction z that themain surface 101 of the insulating substrate 10 faces. The insulatingbase 70 is made of a material that contains a glass epoxy resin or aceramic such as alumina.

As shown in FIG. 22, the first conductive layer 71 is arranged on theinsulating base 70, on the side in the thickness direction z that themain surface 101 of the insulating substrate 10 faces. As shown in FIG.20, the leading end of the first conductive layer 71 on the other sidein the first direction x is located further toward the one side in thefirst direction x than the leading end of the insulating base 70 on theother side in the first direction x. The first conductive layer 71 is ametal plate. The metal plate is made of copper or a copper alloy.

As shown in FIG. 22, the second conductive layer 72 is arranged on theinsulating base 70, on the side in the thickness direction z that theback surface 102 of the insulating substrate 10 faces. The secondconductive layer 72 has an opening 721 that passes therethrough in thethickness direction z. As shown in FIG. 21, the opening 721 has arectangular shape as viewed in the thickness direction z. In theabove-described configuration, the first conductive layer 71 and thesecond conductive layer 72 partially overlap with each other as viewedin the thickness direction z, and constitute laminated wiring in a stateof being electrically insulated from each other by the insulating base70.

As shown in FIGS. 20 to 24 (excluding FIG. 23), a plurality of firstthrough-holes 731 are provided in both the insulating base 70 and thefirst conductive layer 71, passing therethrough in the thicknessdirection z. The number of first through-holes 731 corresponds to thenumber of regions of the first upright portion 612 of the first supplyterminal 61. The first through-holes 731 are arranged in the seconddirection y. As shown in FIG. 21, the first through-holes 731 arelocated inside the opening 721 of the second conductive layer 72. Thefirst upright portion 612 is inserted into each of the firstthrough-holes 731. As shown in FIG. 24, the first upright portion 612 isjoined to the first conductive layer 71 in a state of being electricallyconnected thereto by a conductive joining layer 79. The conductivejoining layer 79 is made of lead-free solder that contains tin as themain component, for example. Thus, the first supply terminal 61 iselectrically connected to the first conductive layer 71.

As shown in FIGS. 20, 22, and 23, a plurality of second through-holes732 are provided in both the insulating base 70 and the secondconductive layer 72, passing therethrough in the thickness direction z.The number of second through-holes 732 corresponds to the number ofregions of the second upright portion 622 of the second supply terminal62. The second through-holes 732 are located further toward the otherside in the first direction x than the first through-holes 731. Thesecond through-holes 732 are arranged in the second direction y. Thesecond upright portion 622 is inserted into each of the secondthrough-holes 732. As shown in FIG. 23, the second upright portion 622is joined to the second conductive layer 72 in a state of beingelectrically connected thereto by a conductive joining layer 79. Thus,the second supply terminal 62 is electrically connected to the secondconductive layer 72.

As shown in FIGS. 19 and 22, the molding resin portion 80 coversrespective portions of the first supply terminal 61, the second supplyterminal 62, the insulator 69, the insulating base 70, the firstconductive layer 71, and the second conductive layer 72. Respectiveportions of the insulating base 70, the first conductive layer 71, andthe second conductive layer 72 protrude from the one side of the moldingresin portion 80 in the first direction x. Respective portions of thefirst connection portion 611 of the first supply terminal 61, the secondconnection portion 621 of the second supply terminal 62, and theinsulator 69 protrude from the other side of the molding resin portion80 in the first direction x.

Semiconductor Module A20

The following describes the semiconductor module A20.

As shown in FIG. 22, in the semiconductor module A20, the firstconnection portion 611 of the first supply terminal 61 is joined to thefirst terminal portion 212 of the first input terminal 21 in a state ofbeing electrically connected thereto, and the second connection portion621 of the second supply terminal 62 is joined to the second terminalportion 222 of the second input terminal 22 in a state of beingelectrically connected thereto. A portion of the first connectionportion 611 on the other side in the first direction x is overlaid bythe first terminal portion 212. A portion of the second connectionportion 621 on the other side in the first direction x is overlaid onthe second terminal portion 222. In this case, the extension portion 292of the insulating member 29 is inserted into the space between the pairof separated portions 691 of the insulator 69 in the thickness directionz. The first connection portion 611 and the second connection portion621 are respectively joined to the first terminal portion 212 and thesecond terminal portion 222 through laser welding in a state of beingelectrically connected thereto.

In the semiconductor module A20, the first supply terminal 61 and thefirst conductive layer 71 serve as a positive electrode and the secondsupply terminal 62 and the second conductive layer 72 serve as anegative electrode. As a result of portions of the first conductivelayer 71 and the second conductive layer 72 on the one side in the firstdirection x being connected to a direct current power source DC as shownin FIGS. 25 and 26, direct current power is supplied via the bus bar C20to the semiconductor device B10.

First Variation of Second Embodiment

The following describes a semiconductor module A21 according to a firstvariation of the second embodiment of the present disclosure based onFIG. 25. The semiconductor module A21 further includes a capacitor C,compared to the semiconductor module A20.

As shown in FIG. 25, portions of the first conductive layer 71 and thesecond conductive layer 72 on the one side in the first direction x areconnected to the direct current power source DC for supplying directcurrent power to the semiconductor device B10. The capacitor C isconnected in parallel to the first conductive layer 71 and the secondconductive layer 72 that are connected to the direct current powersource DC.

Second Variation of Second Embodiment

The following describes a semiconductor module A22 according to a secondvariation of the second embodiment of the present disclosure based onFIG. 26. The semiconductor module A22 further includes a resistor R,compared to the semiconductor module A21.

As shown in FIG. 26, portions of the first conductive layer 71 and thesecond conductive layer 72 on the one side in the first direction x areconnected to the direct current power source DC for supplying directcurrent power to the semiconductor device B10. The capacitor C isconnected in parallel to the first conductive layer 71 and the secondconductive layer 72 that are connected to the direct current powersource DC. The resistor R is connected to the capacitor C in series. Onthe conduction path between the first conductive layer 71, the secondconductive layer 72, and the capacitor C, the resistor R is connectedbetween the first conductive layer 71 and the capacitor C. Thus, asnubber circuit is formed in the semiconductor module A22.

Next, functions and effects of the semiconductor module A20 will bedescribed.

The semiconductor module A20 includes, as constituent elements, thesemiconductor device B10 and the bus bar C20 that includes the firstsupply terminal 61 having the first connection portion 611 and thesecond supply terminal 62 having the second connection portion 621. Thesecond supply terminal 62 is spaced apart from the first supply terminal61 in the thickness direction z, and at least a portion (secondconnection portion 621) of the second supply terminal 62 overlaps withthe first supply terminal 61 as viewed in the thickness direction z. Thefirst connection portion 611 is joined to the first terminal portion 212in a state of being electrically connected thereto, and the secondconnection portion 621 is joined to the second terminal portion 222 in astate of being electrically connected thereto. Therefore, inductance ofthe semiconductor device B10 can be more stably reduced in thesemiconductor module A20 as well.

The bus bar C20 further includes the insulating base 70, the firstconductive layer 71, and the second conductive layer 72. The firstconductive layer 71 is arranged on the insulating base 70, on the sidein the thickness direction z that the main surface 101 of the insulatingsubstrate 10 faces. The second conductive layer 72 is arranged on theinsulating base 70, on the side in the thickness direction z that theback surface 102 of the insulating substrate 10 faces. The first supplyterminal 61 is electrically connected to the first conductive layer 71.The second supply terminal 62 is electrically connected to the secondconductive layer 72. With this configuration, the first conductive layer71 serves as the positive electrode and the second conductive layer 72serves as the negative electrode in the semiconductor module A20.Therefore, when the back surface 102 of the semiconductor device B10 isjoined to a heat sink, earth of the direct current power source DC (seeFIGS. 25 and 26) that is connected to the first conductive layer 71 andthe second conductive layer 72 can be more easily set on the heat sink.

The first supply terminal 61 includes the first upright portion 612 thatextends from the leading end of the first connection portion 611 on theone side in the first direction x toward the side in the thicknessdirection z that the main surface 101 of the insulating substrate 10faces. The first upright portion 612 is joined to the first conductivelayer 71 in a state of being electrically connected thereto. The secondsupply terminal 62 includes the second upright portion 622 that extendsfrom the leading end of the second connection portion 621 on the oneside in the first direction x toward the side in the thickness directionz that the main surface 101 faces. The second upright portion 622 isjoined to the second conductive layer 72 in a state of beingelectrically connected thereto. The second upright portion 622 overlapswith the first upright portion 612 as viewed in the first direction x.Thus, continuous laminated wiring can be realized in the bus bar C20 bythe first supply terminal 61, the first conductive layer 71, the secondsupply terminal 62, and the second conductive layer 72.

The insulating base 70 and the first conductive layer 71 are providedwith the first through-holes 731 passing therethrough in the thicknessdirection z. As a result of the first upright portion 612 being insertedinto the first through-holes 731, the first upright portion 612 can bejoined to the first conductive layer in a state of being electricallyconnected thereto. The insulating base 70 and the second conductivelayer 72 are provided with the second through-holes 732 passingtherethrough in the thickness direction z. As a result of the secondupright portion 622 being inserted into the second through-holes 732,the second upright portion 622 can be joined to the second conductivelayer 72 in a state of being electrically connected thereto. Further,the second through-holes 732 are located further toward the other sidein the first direction x than the first through-holes 731. Therefore,interference between the first upright portion 612 and the secondupright portion 622 can be avoided.

Third Embodiment

The following describes a semiconductor module A30 according to a thirdembodiment of the present disclosure based on FIGS. 27 to 33. In thesefigures, elements that are the same as or similar to those of theabove-described semiconductor module A10 are denoted with the samereference signs as those used in the semiconductor module A10, and aredundant description will be omitted. The semiconductor module A30includes a semiconductor device B20 and a bus bar C30.

Semiconductor Device B20

The following describes the semiconductor device B20 included inconstituent elements of the semiconductor module A30. In thesemiconductor device B20, the configurations of the first input terminal21 and the second input terminal 22 differ from those in thesemiconductor device B10 constituting the above-described semiconductormodule A10.

As shown in FIGS. 27, 29 and 30, the first terminal portion 212 of thefirst input terminal 21 includes a first base portion 212A and a firstflange portion 212B. The first base portion 212A extends in the firstdirection x. Portions of the first base portion 212A on both sides inthe second direction y are covered by the sealing resin portion 50. Thefirst flange portion 212B extends from a leading end of the first baseportion 212A on the one side in the first direction x toward the side inthe thickness direction z that the back surface 102 of the insulatingsubstrate 10 faces. The first flange portion 212B is provided with afirst hole 212C that passes therethrough in the first direction x.

As shown in FIGS. 28 to 30, the second terminal portion 222 of thesecond input terminal 22 includes a second base portion 222A and asecond flange portion 222B. The second base portion 222A extends in thefirst direction x. Portions of the second base portion 222A on bothsides in the second direction y are covered by the sealing resin portion50. The second flange portion 222B extends from a leading end of thesecond base portion 222A on the one side in the first direction x towardthe side in the thickness direction z that the main surface 101 of theinsulating substrate 10 faces. The second flange portion 222B isprovided with a second hole 222C that passes therethrough in the firstdirection x.

As shown in FIG. 30, the interposed portion 291 of the insulating member29 is located between the first base portion 212A of the first terminalportion 212 and the second base portion 222A of the second terminalportion 222 in the thickness direction z. The second input terminal 22is spaced apart from the first input terminal 21, on the side in thethickness direction z that the main surface 101 of the insulatingsubstrate 10 faces.

Bus Bar C30

The following describes the bus bar C30 included in constituent elementsof the semiconductor module A30. In the bus bar C30, the configurationsof the first supply terminal 61, the second supply terminal 62, and theinsulator 69 differ from those in the bus bar C10 constituting theabove-described semiconductor module A10.

As shown in FIG. 32, the first supply terminal 61 includes a third baseportion 613 and a third flange portion 614. The third base portion 613extends in the first direction x. The third base portion 613 is incontact with the insulator 69, on the side in the thickness direction zthat the back surface 102 of the insulating substrate 10 faces. Thethird flange portion 614 extends from a leading end of the third baseportion 613 on the other side in the first direction x toward the sidein the thickness direction z that the back surface 102 faces. As shownin FIG. 33, the third flange portion 614 is provided with a third hole615 that passes therethrough in the first direction x. The position andsize of the third hole 615 correspond to those of the first hole 212Cprovided in the first flange portion 212B of the first terminal portion212.

As shown in FIGS. 31 and 32, the second supply terminal 62 includes afourth base portion 623 and a fourth flange portion 624. The fourth baseportion 623 extends in the first direction x. The fourth base portion623 is in contact with the insulator 69, on the side in the thicknessdirection z that the main surface 101 of the insulating substrate 10faces. The fourth flange portion 624 extends from a leading end of thefourth base portion 623 on the other side in the first direction xtoward the side in the thickness direction z that the main surface 101faces. As shown in FIG. 33, the fourth flange portion 624 is providedwith a fourth hole 625 that passes therethrough in the first directionx. The position and size of the fourth hole 625 correspond to those ofthe second hole 222C provided in the second flange portion 222B of thesecond terminal portion 222.

As shown in FIG. 32, the second supply terminal 62 is spaced apart fromthe first supply terminal 61, on the side in the thickness direction zthat the main surface 101 of the insulating substrate 10 faces. Thethird base portion 613 of the first supply terminal 61 and the fourthbase portion 623 of the second supply terminal 62 overlap with eachother as viewed in the thickness direction z, and constitute laminatedwiring in a state of being electrically insulated from each other by theinsulator 69. It should be noted that the bus bar C30 may also have aconfiguration that does not include the molding resin portion 80.

Semiconductor Module A30

The following describes the semiconductor module A30.

As shown in FIG. 32, in the semiconductor module A30, the third flangeportion 614 of the first supply terminal 61 is joined to the firstflange portion 212B of the first terminal portion 212 (first inputterminal 21) in a state of being electrically connected thereto. Thethird flange portion 614 abuts against the first flange portion 212B. Asshown in FIGS. 31 and 32, the fourth flange portion 624 of the secondsupply terminal 62 is joined to the second flange portion 222B of thesecond terminal portion 222 (second input terminal 22) in a state ofbeing electrically connected thereto. The fourth flange portion 624abuts against the second flange portion 222B. In this case, as shown inFIG. 33, the extension portion 292 of the insulating member 29 isinserted into a space between the third base portion 613 of the firstsupply terminal 61 and the fourth base portion 623 of the second supplyterminal 62 in the thickness direction z.

As shown in FIG. 33, a fastening member 90 is inserted into the firsthole 212C provided in the first flange portion 212B of the firstterminal portion 212 and the third hole 615 provided in the third flangeportion 614 of the first supply terminal 61. The fastening member 90 isconstituted by a bolt and a nut, for example. Thus, the first flangeportion 212B and the third flange portion 614 are joined together in astate of being electrically connected to each other. Also, a fasteningmember 90 is inserted into the second hole 222C provided in the secondflange portion 222B of the second terminal portion 222 and the fourthhole 625 provided in the fourth flange portion 624 of the second supplyterminal 62. Thus, the second flange portion 222B and the fourth flangeportion 624 are joined together in a state of being electricallyconnected to each other.

In the semiconductor module A30, the first supply terminal 61 serves asa positive electrode and the second supply terminal 62 serves as anegative electrode. Therefore, as in the case of the semiconductormodule A10, as a result of portions of the first supply terminal 61 andthe second supply terminal 62 on the one side in the first direction xbeing connected to a direct current power source DC (see FIGS. 17 and18), direct current power is supplied via the bus bar C30 to thesemiconductor device B20.

The semiconductor module A30 can have a configuration that furtherincludes a capacitor C that is connected in parallel to the first supplyterminal 61 and the second supply terminal 62, similarly to thesemiconductor module A11 shown in FIG. 17. Also, the semiconductormodule A30 can have a configuration that further includes the capacitorC and a resistor R that is connected to the capacitor C in series,similarly to the semiconductor module A12 shown in FIG. 18.

Next, functions and effects of the semiconductor module A30 will bedescribed.

The semiconductor module A30 includes, as constituent elements, thesemiconductor device B20 that includes the first input terminal 21having the first terminal portion 212 and the second input terminal 22having the second terminal portion 222, and the bus bar C30 thatincludes the first supply terminal 61 and the second supply terminal 62.The second terminal portion 222 is spaced apart from the first terminalportion 212 in the thickness direction z and overlaps with the firstterminal portion 212 as viewed in the thickness direction z. The secondsupply terminal 62 is spaced apart from the first supply terminal 61 inthe thickness direction z and overlaps with the first supply terminal 61as viewed in the thickness direction z. The first supply terminal 61 isjoined to the first terminal portion 212 in a state of beingelectrically connected thereto, and the second supply terminal 62 isjoined to the second terminal portion 222 in a state of beingelectrically connected thereto. Therefore, inductance of thesemiconductor device B20 can be more stably reduced in the semiconductormodule A30 as well.

The first terminal portion 212 includes the first flange portion 212Bthat extends from the leading end of the first base portion 212A on theone side in the first direction x toward the side in the thicknessdirection z that the back surface 102 of the insulating substrate 10faces. The second terminal portion 222 includes the second flangeportion 222B that extends from the leading end of the second baseportion 222A on the one side in the first direction x toward the side inthe thickness direction z that the main surface 101 of the insulatingsubstrate 10 faces. The first supply terminal 61 includes the thirdflange portion 614 that extends from the leading end of the third baseportion 613 on the other side in the first direction x toward the sidein the thickness direction z that the back surface 102 faces. The secondsupply terminal 62 includes the fourth flange portion 624 that extendsfrom the leading end of the fourth base portion 623 on the other side inthe first direction x toward the side in the thickness direction z thatthe main surface 101 faces. The third flange portion 614 abuts againstthe first flange portion 212B. These are joined together using thefastening member 90. Thus, the first supply terminal 61 can be joined tothe first terminal portion 212 in a state of being electricallyconnected thereto. The fourth flange portion 624 abuts against thesecond flange portion 222B. These are joined together using thefastening member 90. Thus, the second supply terminal 62 can be joinedto the second terminal portion 222 in a state of being electricallyconnected thereto.

The present disclosure is not limited to the above-describedembodiments. Various design changes can be made to specificconfigurations of respective portions described in the presentdisclosure.

Various embodiments in the present disclosure can be defined by thefollowing appendixes.

Appendix 1

A semiconductor module comprising:

a semiconductor device that includes: an insulating substrate having amain surface and a back surface that face opposite to each other in athickness direction; a conductive member arranged on the main surface; aplurality of switching elements electrically connected to the conductivemember; a first input terminal having a first terminal portion andelectrically connected to the conductive member; and a second inputterminal having a second terminal portion overlapping with the firstterminal portion as viewed in the thickness direction, the second inputterminal being spaced apart from the first input terminal and theconductive member in the thickness direction and electrically connectedto the plurality of switching elements; and

a bus bar that includes a first supply terminal and a second supplyterminal spaced apart from the first supply terminal in the thicknessdirection, the second supply terminal at least partially overlappingwith the first supply terminal as viewed in the thickness direction,

wherein the first supply terminal is electrically connected to the firstterminal portion, and

the second supply terminal is electrically connected to the secondterminal portion.

Appendix 2

The semiconductor module according to appendix 1,

wherein the semiconductor device further includes an insulating memberdisposed between the first terminal portion and the second terminalportion in the thickness direction.

Appendix 3

The semiconductor module according to appendix 2,

wherein, as viewed in the thickness direction, the first terminalportion and the second terminal portion extend toward one side in afirst direction orthogonal to the thickness direction, and

the insulating member includes: an interposed portion located betweenthe first terminal portion and the second terminal portion in thethickness direction; and an extension portion extending from theinterposed portion toward the one side in the first direction beyond thefirst terminal portion and the second terminal portion.

Appendix 4

The semiconductor module according to appendix 3,

wherein the bus bar further includes an insulator disposed between thefirst supply terminal and the second supply terminal in the thicknessdirection,

the first supply terminal and the second supply terminal have respectiveends located on another side in the first direction, and the insulatoris located further toward the one side in the first direction than therespective ends of the first supply terminal and the second supplyterminal.

Appendix 5

The semiconductor module according to appendix 4,

wherein the insulator includes a pair of separated portions spaced apartfrom each other in the thickness direction, and the extension portion isinserted into a space provided between the pair of separated portions inthe thickness direction.

Appendix 6

The semiconductor module according to appendix 5,

wherein the second terminal portion is spaced apart from the firstterminal portion to a side in the thickness direction that the mainsurface faces, and

the second supply terminal is spaced apart from the first supplyterminal to the side in the thickness direction that the main surfacefaces.

Appendix 7

The semiconductor module according to appendix 6,

wherein a portion of the first supply terminal on the other side in thefirst direction overlaps with the first terminal portion, and

a portion of the second supply terminal on the other side in the firstdirection overlaps with the second terminal portion.

Appendix 8

The semiconductor module according to appendix 7,

wherein the first supply terminal and the second supply terminal arerespectively joined to the first terminal portion and the secondterminal portion by laser welding in electrical connection thereto.

Appendix 9

The semiconductor module according to appendix 6,

wherein the bus bar further includes an insulating base, a firstconductive layer arranged on the insulating base on the side in thethickness direction that the main surface faces, and a second conductivelayer arranged on the insulating base on a side in the thicknessdirection that the back surface faces,

the first supply terminal is electrically connected to the firstconductive layer, and

the second supply terminal is electrically connected to the secondconductive layer.

Appendix 10

The semiconductor module according to appendix 9,

wherein the first supply terminal includes a first connection portionthat is in contact with both the first terminal portion and theinsulator, and a first upright portion that extends from a leading endof the first connection portion on the one side in the first directiontoward the side in the thickness direction that the main surface faces,

the insulating base and the first conductive layer are provided with afirst through-hole that passes in the thickness direction, and

the first upright portion is inserted into the first through-hole and isjoined to the first conductive layer in electrical connection thereto.

Appendix 11

The semiconductor module according to appendix 10,

wherein the second supply terminal includes a second connection portionthat is in contact with both the second terminal portion and theinsulator and overlaps with the first connection portion as viewed inthe thickness direction, and a second upright portion that extends froma leading end of the second connection portion on the one side in thefirst direction toward the side in the thickness direction that the mainsurface faces, and overlaps with the first upright portion as viewed inthe first direction,

the insulating base and the second conductive layer are provided with asecond through-hole that passes in the thickness direction and islocated further toward the other side in the first direction than thefirst through-hole, and

the second upright portion is inserted into the second through-hole andis joined to the second conductive layer in electrical connectionthereto.

Appendix 12

The semiconductor module according to appendix 4,

wherein the extension portion is inserted into a space that is providedbetween the first supply terminal and the second supply terminal in thethickness direction.

Appendix 13

The semiconductor module according to appendix 12,

wherein the second terminal portion is spaced apart from the firstterminal portion on a side in the thickness direction that the mainsurface faces,

the second supply terminal is spaced apart from the first supplyterminal on the side in the thickness direction that the main surfacefaces,

the first terminal portion includes a first base portion that extends inthe first direction and a first flange portion that extends from aleading end of the first base portion on the one side in the firstdirection toward a side in the thickness direction that the back surfacefaces,

the second terminal portion includes a second base portion that extendsin the first direction and a second flange portion that extends from aleading end of the second base portion on the one side in the firstdirection toward the side in the thickness direction that the mainsurface faces,

the first supply terminal includes a third base portion that extends inthe first direction and a third flange portion that extends from aleading end of the third base portion on the other side in the firstdirection toward the side in the thickness direction that the backsurface faces,

the second supply terminal includes a fourth base portion that extendsin the first direction and a fourth flange portion that extends from aleading end of the fourth base portion on the other side in the firstdirection toward the side in the thickness direction that the mainsurface faces,

the third flange portion abuts against the first flange portion, and

the fourth flange portion abuts against the second flange portion.

Appendix 14

The semiconductor module according to appendix 13,

wherein the first flange portion and the third flange portion are joinedtogether by a fastening member in electrical connection to each other,and the second flange portion and the fourth flange portion are joinedtogether by a fastening member in electrical connection to each other.

Appendix 15

The semiconductor module according to any one of appendixes 2 to 14,further comprising a capacitor connected in parallel to the first supplyterminal and the second supply terminal.

Appendix 16

The semiconductor module according to appendix 15, further comprising aresistor connected to the capacitor in series.

Appendix 17

The semiconductor module according to any one of appendixes 2 to 16,

wherein the semiconductor device further includes a sealing resinportion that covers the plurality of switching elements such that theback surface is exposed, and

respective portions of the first terminal portion, the second terminalportion, and the insulating member are covered by the sealing resinportion.

The invention claimed is:
 1. A semiconductor module comprising: a semiconductor device that includes: an insulating substrate having a main surface and a back surface that face opposite to each other in a thickness direction; a conductive member arranged on the main surface; a plurality of switching elements electrically connected to the conductive member; a first input terminal having a first terminal portion and electrically connected to the conductive member; and a second input terminal having a second terminal portion overlapping with the first terminal portion as viewed in the thickness direction, the second input terminal being spaced apart from the first input terminal and the conductive member in the thickness direction and electrically connected to the plurality of switching elements; and a bus bar that includes a first supply terminal and a second supply terminal spaced apart from the first supply terminal in the thickness direction, the second supply terminal at least partially overlapping with the first supply terminal as viewed in the thickness direction, wherein the first supply terminal is electrically connected to the first terminal portion, and the second supply terminal is electrically connected to the second terminal portion.
 2. The semiconductor module according to claim 1, wherein the semiconductor device further includes an insulating member disposed between the first terminal portion and the second terminal portion in the thickness direction.
 3. The semiconductor module according to claim 2, wherein, as viewed in the thickness direction, the first terminal portion and the second terminal portion extend toward one side in a first direction orthogonal to the thickness direction, and the insulating member includes: an interposed portion located between the first terminal portion and the second terminal portion in the thickness direction; and an extension portion extending from the interposed portion toward the one side in the first direction beyond the first terminal portion and the second terminal portion.
 4. The semiconductor module according to claim 3, wherein the bus bar further includes an insulator disposed between the first supply terminal and the second supply terminal in the thickness direction, the first supply terminal and the second supply terminal have respective ends located on another side in the first direction, and the insulator is located further toward the one side in the first direction than the respective ends of the first supply terminal and the second supply terminal.
 5. The semiconductor module according to claim 4, wherein the insulator includes a pair of separated portions spaced apart from each other in the thickness direction, and the extension portion is inserted into a space provided between the pair of separated portions in the thickness direction.
 6. The semiconductor module according to claim 5, wherein the second terminal portion is spaced apart from the first terminal portion to a side in the thickness direction that the main surface faces, and the second supply terminal is spaced apart from the first supply terminal to the side in the thickness direction that the main surface faces.
 7. The semiconductor module according to claim 6, wherein a portion of the first supply terminal on the other side in the first direction overlaps with the first terminal portion, and a portion of the second supply terminal on the other side in the first direction overlaps with the second terminal portion.
 8. The semiconductor module according to claim 7, wherein the first supply terminal and the second supply terminal are respectively joined to the first terminal portion and the second terminal portion by laser welding in electrical connection thereto.
 9. The semiconductor module according to claim 6, wherein the bus bar further includes an insulating base, a first conductive layer arranged on the insulating base on the side in the thickness direction that the main surface faces, and a second conductive layer arranged on the insulating base on a side in the thickness direction that the back surface faces, the first supply terminal is electrically connected to the first conductive layer, and the second supply terminal is electrically connected to the second conductive layer.
 10. The semiconductor module according to claim 9, wherein the first supply terminal includes a first connection portion that is in contact with both the first terminal portion and the insulator, and a first upright portion that extends from a leading end of the first connection portion on the one side in the first direction toward the side in the thickness direction that the main surface faces, the insulating base and the first conductive layer are provided with a first through-hole that passes in the thickness direction, and the first upright portion is inserted into the first through-hole and is joined to the first conductive layer in electrical connection thereto.
 11. The semiconductor module according to claim 10, wherein the second supply terminal includes a second connection portion that is in contact with both the second terminal portion and the insulator and overlaps with the first connection portion as viewed in the thickness direction, and a second upright portion that extends from a leading end of the second connection portion on the one side in the first direction toward the side in the thickness direction that the main surface faces, and overlaps with the first upright portion as viewed in the first direction, the insulating base and the second conductive layer are provided with a second through-hole that passes in the thickness direction and is located further toward the other side in the first direction than the first through-hole, and the second upright portion is inserted into the second through-hole and is joined to the second conductive layer in electrical connection thereto.
 12. The semiconductor module according to claim 4, wherein the extension portion is inserted into a space that is provided between the first supply terminal and the second supply terminal in the thickness direction.
 13. The semiconductor module according to claim 12, wherein the second terminal portion is spaced apart from the first terminal portion on a side in the thickness direction that the main surface faces, the second supply terminal is spaced apart from the first supply terminal on the side in the thickness direction that the main surface faces, the first terminal portion includes a first base portion that extends in the first direction and a first flange portion that extends from a leading end of the first base portion on the one side in the first direction toward a side in the thickness direction that the back surface faces, the second terminal portion includes a second base portion that extends in the first direction and a second flange portion that extends from a leading end of the second base portion on the one side in the first direction toward the side in the thickness direction that the main surface faces, the first supply terminal includes a third base portion that extends in the first direction and a third flange portion that extends from a leading end of the third base portion on the other side in the first direction toward the side in the thickness direction that the back surface faces, the second supply terminal includes a fourth base portion that extends in the first direction and a fourth flange portion that extends from a leading end of the fourth base portion on the other side in the first direction toward the side in the thickness direction that the main surface faces, the third flange portion abuts against the first flange portion, and the fourth flange portion abuts against the second flange portion.
 14. The semiconductor module according to claim 13, wherein the first flange portion and the third flange portion are joined together by a fastening member in electrical connection to each other, and the second flange portion and the fourth flange portion are joined together by a fastening member in electrical connection to each other.
 15. The semiconductor module according to claim 2, further comprising a capacitor connected in parallel to the first supply terminal and the second supply terminal.
 16. The semiconductor module according to claim 15, further comprising a resistor connected to the capacitor in series.
 17. The semiconductor module according to claim 2, wherein the semiconductor device further includes a sealing resin portion that covers the plurality of switching elements such that the back surface is exposed, and respective portions of the first terminal portion, the second terminal portion, and the insulating member are covered by the sealing resin portion. 